A leading manufacturer of gallium nitride wafers!
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PAM-XIAMEN crystal growth co.,ltd a leading manufacture of Nitride semiconductor wafers, it has established the manufacturing technology for key products of GaN epitaxy on Sapphire and freestanding GaN wafer substrate which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology, the GaN wafer has low defect density and less or free macro defect density.
Currently we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer's requests,including researcher and device foundry.
Especially, we can offer 2" size native semi-insulating GaN (SI GaN) substrates and 2” size native n type GaN substrate with c plane,a plane and m plane,which is on mass production in 2011. Thanks to HVPE, we are pleased to offer larger native SI gallium nitride(GaN) to our customers including many who are developing better and more reliable high frequency high power GaN transistors. Our 50mm dia.native SI GaN product has excellent resistivity properties just like our smaller SI GaN substrates, as corroborated by recent electrical resistivity mapping measurements carried out. The larger size and availability improve our native SI GaN boule growth and wafering processes. And our customers can now benefit from the increased device yield expected when developing advanced transistors on a larger square substrate. Our larger square SI GaN substrates are natural by products of our ongoing.
AlGaN/GaN HEMT Epi Wafer on sapphire or silcion carbide or Silicon,and AlGaN/GaN on sapphire template are developed today.
InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based ultra violet (UV), blue laser diodes (LDs) and solar photovoltaic application. Indium gallium nitride is as the light-emitting layer for these light-emitting devices and determine device efficiency, light output power and lifetime. InGaN substrates are needed for InGaN-based device epitaxial structures and to improve device performance.
We also offer GaN epi wafer – LED wafer for blue light and green light.
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