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Home > News > A comparative study of the deposition conditions in the plasma-assisted deposition of gallium nitride thin films
A comparative study of the deposition conditions in the plasma-assisted deposition of gallium nitride thin films
Several plasma-assisted methods used to deposit gallium nitride films at low substrate temperatures (below 450°C) are compared, with particular attention being paid to oxygen incorporation. The variations in such properties as the optical absorption, the refractive index, the resistivity and the dielectric dispersion of films deposited by the different methods can usually be explained in terms of differences in the incorporated oxygen content. It is concluded that the following two methods are best for the deposition of stoichiometric GaN at low temperatures: (a) plasma-assisted chemical vapour deposition using trimethylgallium and ammonia gas; (b) magnetron-type reactive sputtering using a gallium metal target.
 
Source: Thin Solid Films
 
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