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Aluminium Gallium Nitride

Model NO.:intanetcms000063
Aluminium Gallium Nitride

2" Aluminum Gallium Nitride Epitaxy on Sapphire Templates 
Item PAM-50-AlGaN-T-SI 
Size 2"(50.8mm) dia.
Thickness 1-5um
Orientation C-axis(0001)+/-1O
Orientation Flat A-plane
Al dopant 10%,20%,30%,40% or custom
XRD FWHM of (0002) <200 arcsec
Substrate Structure AlGaN on Sapphire(0001)
Surface Finish Single or Double Side Polished 
Usable Area  ≥ 90 % 



1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100%
2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm
3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2