Aluminium Gallium Nitride
Model NO.:intanetcms000063
FEATURE
| 2" Aluminum Gallium Nitride Epitaxy on Sapphire Templates | |||||
| Item | PAM-50-AlGaN-T-SI | ||||
| Size | 2"(50.8mm) dia. | ||||
| Thickness | 1-5um | ||||
| Orientation | C-axis(0001)+/-1O | ||||
| Orientation Flat | A-plane | ||||
| Al dopant | 10%,20%,30%,40% or custom | ||||
| XRD FWHM of (0002) | <200 arcsec | ||||
| Substrate Structure | AlGaN on Sapphire(0001) | ||||
| Surface Finish | Single or Double Side Polished | ||||
| Usable Area | ≥ 90 % | ||||
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Remark: |
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| 1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100% | |||||
| 2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm | |||||
| 3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2 | |||||