Aluminium Nitride
Model NO.:intanetcms000062
FEATURE
| 2”AlN Template Epitaxy on Sapphire Templates | |||||
| Item | PAM-AlN-T-SI | ||||
| Conduction Type | semi-insulating | ||||
| Diameter | Ф 50.8mm ± 1mm | ||||
| Thickness: | 1000nm+/- 10% | ||||
| Substrate: | sapphire | ||||
| Orientation : | C-plane | ||||
| Orientation Flat | A-plane | ||||
| XRD FWHM of (0002) | <200 arcsec. | ||||
| Useable Surface Area | ≥80% | ||||
| Polishing: | None | ||||
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Remark: |
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| 1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100% | |||||
| 2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm | |||||
| 3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2 | |||||