Aluminium Nitride
Model NO.:intanetcms000062FEATURE
2”AlN Template Epitaxy on Sapphire Templates | |||||
Item | PAM-AlN-T-SI | ||||
Conduction Type | semi-insulating | ||||
Diameter | Ф 50.8mm ± 1mm | ||||
Thickness: | 1000nm+/- 10% | ||||
Substrate: | sapphire | ||||
Orientation : | C-plane | ||||
Orientation Flat | A-plane | ||||
XRD FWHM of (0002) | <200 arcsec. | ||||
Useable Surface Area | ≥80% | ||||
Polishing: | None | ||||
Remark: |
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1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100% | |||||
2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm | |||||
3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2 |