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Aluminium Nitride

Model NO.:intanetcms000062
Aluminium Nitride

2”AlN Template Epitaxy on Sapphire Templates
Conduction Type semi-insulating
Diameter Ф 50.8mm ± 1mm
Thickness: 1000nm+/- 10%
Substrate:  sapphire
Orientation : C-plane
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Useable Surface Area ≥80%
 Polishing: None



1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100%
2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm
3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2