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Blue Light on PSS

Model NO.:intanetcms000065
Blue Light on PSS
FEATURE

 

p-GaN

P-layer

Active  region  (MQW)

n-GaN

GaN

GaN buffer

 

Sapphire substrate

 

 

 

Our wafers wil have folowing parameters:

GaN on PSS epi wafer Specification(LED Epiwafer)

Blue：445～475 nm

1. Growth Technique - MOCVD

2. Diameter: 2”,3”,4”

3. Substrate material: Patterned Sapphire Substrate(Al2O3)

4. Pattern size: 3X2X1.5μm

5.Structure

Structure layers

Thickness(μm)

p-GaN

0.2

p-AlGaN

0.03

InGaN/GaN(active area)

0.2

n-GaN

2.5

u- GaN

2

Al2O3 (Substrate)

430

 

We need to prepare LED chip from above mentioned wafer: 

Chip size will be different depending LED application

The main application will be phospohor conerterted LED s for general illumination

 Now we show parameters of CHIP 45 mil x 45 mil to indicate our wafer as follow:

 

1. Model Name: P4545B

Unit: μm

 

 

 

 

 

 

 

 

 

 

2. Features:

 

  (1) High radiant flux.

 

  (2) Long operation life.

 

  (3) Excellent Reliability.

 

  (4) Lighting applications.

 

 

 

3. Characteristics:

 

   (1) Size:

 

     Chip size: 45mil×45mil (1200μm×1200μm)

 

     Chip thickness: 150μm±10μm

 

     P bonding pad: 100μm±5μm

 

     N bonding pad: 100μm±5μm

 

   (2) Metallization:

 

     P electrode: Au alloy

 

     N electrode: Au alloy

 

   (3) Structure:

 

     Refer to drawing

 

 

4. Electro-Optical Characteristics (Ta=25℃):

Note:

(1) ESD protection during chip handling is strongly recommended.

(2) All measurements are done on chip form with standard testing equipments..

(3) Value of Spectra Half Width is only for reference(4) Assembly processing temperature must not exceed 280℃ (<10 seconds).

(5) Customer’s special requirements are also welcome.

 

5. Absolute Maximum Ratings (Ta=25℃):

 

6. Characteristic Curves:

These are representative measurements for the P4545B LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins.