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Home > News > Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
The extreme thermal and electronic properties of diamond, SiC and GaN provide combinations of attributes which lead to the highest figures of merit for any semiconductor materials for high power, temperature, frequency and optoelectronic applications. The methods of deposition and the results of chemical, structural, microstructural and electrical characterization are briefly reviewed for thin film of these three materials.
 
Source: Journal of Crystal Growth
 
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