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Home > News > Efficiency droop in gallium indium nitride (GaInN) gallium nitride (GaN) LEDs
Efficiency droop in gallium indium nitride (GaInN) gallium nitride (GaN) LEDs

The decrease in efficiency at high current densities, i.e. the efficiency droop, is introduced in the context of GaInN/GaN light-emitting diodes (LEDs). We begin with an overview of the ABC model for the recombination of carriers in GaInN/GaN LEDs. The weaknesses of this model are described, and the model is reformulated by including a carrier leakage term. Several explanations for droop are presented and analyzed, including their strengths and weaknesses. Particular emphasis is given to high-level injection and the associated drift-induced electron leakage out of the active region. Finally, several proposed solutions to overcome efficiency droop are presented.

Key words

  • light-emitting diode
  • efficiency droop
  • compound semiconductor
  • carrier asymmetry

 

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