Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si
Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si

We report recent qualitative advances in bonding and etch-back of silicon on insulator (SOI) using structure-sensitive selective etching of porous Si. The defect density in the epitaxial layer grown on the porous Si is lowered to 3.5×102/cm2 by raising the H2 prebake temperature in conjunction with the "preinjection technique" in which a small amount of Si is supplied during the high-temperature H2 prebake prior to epitaxial growth. H2 annealing also gives a smooth SOI surface comparable to the bulk polished wafer. Improved thickness uniformity of ±1.8% is achieved using the single wafer processing epi-reactor. The electrical characteristics are evaluated by fabricating pn-junction diode.

 

For more information, please visit our website:www.galliumnitrides.com,

send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com