Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China

GaN N Type

Model NO.:intanetcms000058
GaN N Type
FEATURE

2" Gallium Nitride Epitaxy on Sapphire Templates
Item PAM-76-GaN-T-N  PAM-50-GaN-T-N
Conduction Type N-type 
Dopant Si doped or undoped
Size 2"(50mm) dia.
Thickness 3um,20um,30um,50um,100um
Orientation C-axis(0001)+/-1O
Resistivity(300K) <0.05Ω·cm
Dislocation Density <1x108cm-2
Substrate Structure  GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area  ≥ 90 % 

 

Remark:

1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100%
2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120 ohm.cm
3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2