GaN P Type

Model NO.:intanetcms000059
GaN P Type

2" Gallium Nitride Epitaxy on Sapphire Templates: P-type
Item PAM-50-GaN-T-P
Conduction Type P-type 
Dopant Mg doped  
Size 2"(50mm) dia.
Thickness 5um
Orientation C-axis(0001)+/-1O
Resistivity(300K) <1Ω·cm or custom
Dopant Concentration  1E17(cm-3) or custom
Substrate Structure  GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area  ≥ 90 % 



1)High quality monolayer of aluminum gallium nitride (AlxGa1-xN) epitaxial films with different aluminum component,on the sapphire substrate,the InGaN thickness: 0.25-3um,aluminum component x = 0-100%
2)Simplex n-type a high alumina AlGaN material,on a sapphire substrate,resistivity uniformity is more than 99%, and the sheet resistance is < 120
3)Multilayer AlGaN heterojunction epitaxial films, dimensional electron gas mobility ≥ 1000cm2/Vs and surface density≥ 1.0x10^13cm-2