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Home > News > Research on the Performance of MSM Gan Ultraviolet Photoelectric Detector
Research on the Performance of MSM Gan Ultraviolet Photoelectric Detector
GaN ultraviolet photoelectric detector have advantages of high quantum efficiency, work at room temperature, high-temperature resistance, good corrosion resistance, resistance to radiation ability etc. Therefore, research of GaN ultraviolet photoelectric detector has important application value in the spacecraft, fire monitoring, ultraviolet communication and other fields. MSM Schottky type ultraviolet photoelectric detector has been prepared by a metal organic chemical vapor phase epitaxial deposition method in growth of high quality GaN semiconductor film on the sapphire substrate. Then optical and electrical properties of device have been studied by analyzing its illumination and light response performance. The detector sample has high pressure resistance and response degree. After annealed treatment, the ultraviolet detector has response peak for 0.19 A/W and response time for 70ns.
Source: Prasad Yarlagadda and Yun-Hae Kim
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