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Home > News > Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

  Following an already established polarity control scheme for GaN thin films, we developed a process to simultaneously grow Ga- and N-polarity layers side by side onc-plane sapphire. The simultaneous growth is achieved by properly treating the AlN nucleation/buffer layer and subsequent substrate annealing. During this process, the growth is mass-transfer-limited, permitting the same growth rate for both types of polarity domains. Smooth domains of both polarity types (RMS roughness ∼1–2 nm) were obtained.

Keywords

  • A1. Crystal strcture
  • A3. Chemical vapor deposition process
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III–V materials
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  • SOURECE:SCIENCEDIRECT


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