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Home > News > Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
We report on optimization studies for the growth of GaN films by the electron cyclotron resonance microwave plasmaassisted molecular beam epitaxy (ECRMBE) method on the R plane of sapphire. The films were grown by the reaction of Ga vapor with ECRactivated molecular nitrogen and their growth kinetics were found to depend strongly on the distance between the ECR condition and the substrate. Single crystalline films with their α plane (112¯0) parallel to the R plane of sapphire (101¯2) were grown with the substrate held at 400–700°C. All films were found to be n type with carrier concentrations varying between 1017 and 1019 cm-3. Films grown at 600°C were found to have the smallest amount of strain and the highest electron mobility, suggesting that strain might be one of the sources of compensating defects.
 
Source:IEEE
 
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