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Home > News > High growth speed of gallium nitride using ENABLE-MBE
High growth speed of gallium nitride using ENABLE-MBE




GaN films were grown on AlN buffer layers on sapphire substrates.

The growth speed of GaN was investigated.

Samples were characterized with X-ray diffraction, ellipsometry, and cathodoluminescence.

GaN grown at ~60 nm/min exhibits characteristics nearly identical to ~15 nm/min.


Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray ω scans of GaN (0002) have FWHM in all samples less than 300 arc sec. Cathodoluminescence shows radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates.


  • A1. High resolution X-ray diffraction
  • A1. Cathodoluminescence
  • A3. Molecular beam epitaxy
  • B1. Gallium compounds
  • B1. Nitrides


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