Indium Gallium Nitride
Model NO.:intanetcms000061
FEATURE
| 2" Indium Gallium Nitride Epitaxy on Sapphire Templates | |||||
| Item | PAM-50-InGaN-T-SI | ||||
| Size | 2"(50.8mm) dia. | ||||
| Thickness | 100-200nm | ||||
| Orientation | C-axis(0001)+/-1O | ||||
| Orientation Flat | A-plane | ||||
| In dopant | 10%,20%,30%,40% or custom | ||||
| Dislocation Density | 10^8/cm2 | ||||
| Substrate Structure | InGaN on Sapphire(0001) | ||||
| Surface Finish | Single or Double Side Polished | ||||
| Usable Area | ≥ 90 % | ||||
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Remark: |
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1)High quality monolayer of Indium gallium nitride (InxGa1-xN) epitaxial films with different Indium
component,on the sapphire substrate,the InGaN thickness: 50um-200um,aluminum component x =5-40%.
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2)Simplex semi-insulating type a high indium InGaN material,on a sapphire substrate with good quality,
XRD FWHM(002),(102) is low.
3)Detail Structure:InGaN/GaN/Sapphire.
4)Indium gallium nitride (InGaN, InxGa1-xN) is a semiconductor material made of a mix of gallium nitride (GaN)
and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned
by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
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