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Indium Gallium Nitride

Model NO.:intanetcms000061
Indium Gallium Nitride

2" Indium Gallium Nitride Epitaxy on Sapphire Templates 
Item PAM-50-InGaN-T-SI 
Size 2"(50.8mm) dia.
Thickness 100-200nm
Orientation C-axis(0001)+/-1O
Orientation Flat A-plane
In dopant 10%,20%,30%,40% or custom
Dislocation Density 10^8/cm2
Substrate Structure  InGaN on Sapphire(0001)
Surface Finish Single or Double Side Polished 
Usable Area  ≥ 90 % 



1)High quality monolayer of Indium gallium nitride (InxGa1-xN) epitaxial films with different Indium
component,on the sapphire substrate,the InGaN thickness: 50um-200um,aluminum component x =5-40%.
2)Simplex semi-insulating type a high indium InGaN material,on a sapphire substrate with good quality,
XRD FWHM(002),(102) is low.
3)Detail Structure:InGaN/GaN/Sapphire.
4)Indium gallium nitride (InGaN, InxGa1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) 
and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned 
by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.