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Home > News > Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
Nonpolar (11–20) GaN films with different basal-plane stacking fault (BSF) densities (determined using transmission electron microscopy) were investigated using X-ray diffraction. Diffuse streaking from I1and I2 BSFs was observed in reciprocal space maps of the 10–10 and 20–20 reflections. X-ray calibration curves for BSF density determination can be plotted using the diffusely scattered intensity of open detector 10–10 or 20–20 ω-scans measured at a fixed, large separation from the peak maximum. However, ab initio determination of stacking fault densities is not possible due to additional broadening from other defects. Similarly, ω-scan peak widths are poor indicators of BSF densities.
 
Fig. 1. Reciprocal space maps of the 20–20 and 30–30 reflections (logarithmic intensity scale, over six orders of magnitude), obtained from an a-plane GaN film using the skew symmetric diffraction geometry and plotted on a logarithmic scale (contour lines join areas of equal intensity).
 
Source:Physica B: Condensed Matter
 
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