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Home > News > Ion beam synthesis of gallium nitride
Ion beam synthesis of gallium nitride
This work investigates the synthesis of amorphous and poly-crystalline gallium nitride by ion implantation of Ga ions into AlN substrates at 140 keV. Cross-sectional transmission electron microscopy (XTEM) of AlN layers implanted with Ga to a dose of 1×1017cm-2 into unheated substrates showed that a layer of precipitates was present within the AlN layer. Parallel electron energy loss spectroscopy (PEELS) was used to show that the precipitates largely contain A1. X-ray photoelectron spectroscopy (XPS) provided evidence that GaN-type bonds were present in the Ga-implanted AlN. Auger parameters indicated that Ga exists both in elemental and nitride forms. A ternary phase diagram has been proposed based on the experimental data.
 
Source: sciencedirect
 
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