Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Ion beam synthesis of gallium nitride
Ion beam synthesis of gallium nitride
This work investigates the synthesis of amorphous and poly-crystalline gallium nitride by ion implantation of Ga ions into AlN substrates at 140 keV. Cross-sectional transmission electron microscopy (XTEM) of AlN layers implanted with Ga to a dose of 1×1017cm-2 into unheated substrates showed that a layer of precipitates was present within the AlN layer. Parallel electron energy loss spectroscopy (PEELS) was used to show that the precipitates largely contain A1. X-ray photoelectron spectroscopy (XPS) provided evidence that GaN-type bonds were present in the Ga-implanted AlN. Auger parameters indicated that Ga exists both in elemental and nitride forms. A ternary phase diagram has been proposed based on the experimental data.
Source: sciencedirect
If you need more information about Ion beam synthesis of gallium nitride, please visit: or send us email at