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Home > News > Low-energy ion assisted deposition of epitaxial gallium nitride films
Low-energy ion assisted deposition of epitaxial gallium nitride films
Epitaxial gallium nitride thin films were grown on c-plane and r-plane sapphire by low-energy ion assisted deposition in high vacuum using a constricted glow discharge plasma source for the supply of nitrogen. Instead of preparing a conventional low-temperature buffer layer, a single-temperature process with initial growth rate ramp was performed. The crystallographic structure and texture, defect distribution, morphology and topography of the grown films were investigated with X-ray diffraction techniques, channeling-RBS, TEM and AFM, respectively. The ion assisted growth procedure results in well-oriented, epitaxial, single crystalline, wurtzitic GaN films with low defect densities. The film surfaces are generally smooth, but show either holes or clusters indicating unbalanced gallium and nitrogen fluxes during growth.
 
Fig. 1. θ–2θ diffraction diagrams and ω-scans of thin gallium nitride films grown on c-plane (a) andr-plane (b) sapphire.
 
Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
 
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