- Realization of Low Dislocation GaN/Sapphire Wafers by 3-Step Metalorganic Vapor Phase Epitaxial Growth with Island Induced Dislocation Control
- Sheffield University Research Team Displays LED Grown on Semi-polar GaN or Sapphire
- SOI wafers are suitable substrates for gallium nitride crystals
- Team advances GaN-on-Silicon for scalable high electron mobility transistors
- Efficient and compact voltage converters for the e mobility sector
- Serpentine Pavilion Turns to Minimalist Lighting Design
- Illuminating Art Gracefully with LEDs
- Fremont in California to Convert 14,000 Streetlights to LEDs
- Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 mm diameter Si (111) substrate
- Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning