- First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide
- Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices
- Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas
- Rietveld-refinement study of aluminium and gallium nitrides
- Growths of indium gallium nitride nanowires by plasma-assisted chemical vapor deposition
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
- 3 – Gallium nitride (GaN) on sapphire substrates for visible LEDs
- Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
- Application of the Monte Carlo Method for the Calculation of Electrical Properties, in both Wurtzite and Zinc Blende Phases, of Gallium Nitride
- Cheaper LEDs Possible by Growing Gallium Nitride on Silicon