- Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions
- Freestanding GaN slab fabricated on patterned silicon on an insulator substrate
- Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage
- An AlGaN/GaN HEMT by the periodic pits in the buffer layer
- Synthesis of nanowires and nanoparticles of cubic aluminium nitride
- Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices
- Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
- Strong impact of slight trench direction misalignment from bar on deep trench filling epitaxy for SiC super-junction devices
- Comb-drive GaN micro-mirror on a GaN-on-silicon platform
- Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals