- Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon
- Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment
- Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases
- Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
- Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology
- Electrical and structural properties of rapidly annealed Pd/Mo Schottky contacts on n-type GaN
- Novel band structures in germanene on aluminium nitride substrate
- Indium Nitride and Indium Gallium Nitride layers grown on nanorods