- Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si
- Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
- Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature
- Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
- Laser melting of nitrides of aluminium, silicon, and boron
- Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
- Origin of a fourfold symmetric (0 0 0 6) Bragg diffraction intensity in phiv-scan mode on a 6H-SiC crystal
- Enhancement of the photon extraction of green and blue LEDs by patterning the indium tin oxide top layer
- Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface
- Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer