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  • Nitride Semiconductor
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  • Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si
  • Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
  • Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature
  • Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
  • Laser melting of nitrides of aluminium, silicon, and boron
  • Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
  • Origin of a fourfold symmetric (0 0 0 6) Bragg diffraction intensity in phiv-scan mode on a 6H-SiC crystal
  • Enhancement of the photon extraction of green and blue LEDs by patterning the indium tin oxide top layer
  • Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface
  • Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer
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