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Home > News > Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy
Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy

 

Highlights

 

The flow rates of carrier gas are optimized to improve the uniformity.

Experiment and numerical calculation have been compared to study the newly developed 6 inch-wafer HVPE device.

The temperature effect on the deposition rate is elaborated.

The species fraction and the fluid flow have been investigated to further explain the effect of the carrier gas.

The uniformity of the deposition thickness is evaluated through the analysis of standard deviation.

 


Abstract

In this study, experimental analysis and numerical simulation analysis have been exploited to investigate the effect of the flow rate of the carrier gas and the effect of the temperature in a new multi-wafer hydride vapor phase epitaxy (HVPE) device. The numerical calculation results have shown the same trend with the experimental results demonstrating that increasing the carrier gas flow rate could shift the maximum value position of the deposition rate to increase the uniformity of the deposition rate distribution within the wafer. The species fraction and the fluid flow also have been investigated to further explain the effect of the carrier gas. Furthermore, temperature effect is also studied to show that in a relatively high temperature, the uniformity of the deposition rate in this equipment is better. The uniformity of the deposition thickness is evaluated through the analysis of standard deviation.

Keywords

  • A1. Computer simulation
  • A1. Fluid flow
  • A3. Multi-wafer HVPE
  • B1. GaN
  • SOURECE:SCIENCEDIRECT


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