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Home > News > SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films
SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films
Gallium nitride thin films were deposited on sapphire or zinc oxide substrates with a molecular beam epitaxial method. Thin films with a Ga14N/Ga15N/Ga14N isotopic heterostructure were also grown. A CAMECA-type secondary ion mass spectrometry (SIMS) was employed to analyze impurities such as substrate elements. Nitrogen isotopes were also analyzed. Some samples were annealed in a nitrogen atmosphere, and the diffusivities of the elements and isotopes were evaluated. Although the crater surface after using Cs+ ions as the primary ion beam became smoother than after using O2+, preferential sputtering was observed. It is concluded that this preferential sputtering causes the isotope distribution to be abnormal. Elements of the substrates diffused into the thin films.
 
Source: Applied Surface Science
 
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