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Home > News > Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures

Variations of the photoluminescence spectra and photoconductivity transients with proton and neutron fluence in the semi-insulating GaN-layered structures of different thickness are examined. It has been obtained that the intensity of the photoluminescence bands associated with grown-in defects of the semi-insulating GaN layers decreases non-linearly with irradiation of high-energy proton and neutron fluence in the range of 1014–1016 cm−2. The recombination and trapping lifetimes also exhibit a significant decrease with fluence which is most prominent in thin epilayers. Defect parameters determined from lifetime variations with temperature and from the relative changes of the photoluminescence bands are discussed.

PACS

  • 72.20.Jv
  • 71.55.Eq

Keywords

  • Carrier lifetime
  • Recombination and trapping
  • Semi-insulating GaN
  • Radiation defects  
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    • Source: Sciencedirect
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