Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China

Semi-insulating GaN

Model NO.:intanetcms000057
Semi-insulating GaN
FEATURE

2"GaN Free-standing Substrate
Item PAM-FS-GaN50-SI
Conduction Type Semi-insulating
Size 2"(50.8)+/-1mm
Thickness 300+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 16+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 8+/-1mm
Resistivity(300K) >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                   Back Surface:1.Fine ground 
                                                            2.Rough grinded
Usable Area  ≥ 90 % 

Dia.25.4/38.1/40.0/45.0mm GaN Free-standing Substrate

Item PAM-FS-GaN45-SI                              PAM-FS-GaN40-SI                                 PAM-FS-GaN38-SI                                         PAM-FS-GaN25-SI
Conduction Type Semi-insulating
Size Dia.25.4/38.1/40.0/45.0+/-0.5mm
Thickness 300+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 8/12/14/14+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 4/6/7/7+/-1mm
Resistivity(300K) >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                  Back Surface:1.Fine ground 
                                                            2.Rough grinded
Usable Area  ≥ 90 % 

15mm,10mm,5mm GaN Free-standing Substrate

Item PAM-FS-GaN15-SI                                            PAM-FS -GaN10-SI                                               PAM-FS-GaN5-SI
Conduction Type Semi-insulating
Size 14.0mm*15mm   10.0mm*10.5mm   5.0*5.5mm   
Thickness 300/350/400+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location  
Primary Flat Length  
Secondary Flat Location  
Secondary Flat Length  
Resistivity(300K) >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density 0cm-2  
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                  Back Surface:1.Fine ground 
                                                            2.Rough grinded
Usable Area  ≥ 90 % 

Note: 

Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2" Sapphire Validation wafer for below 2" size Freestanding GaN 


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