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Home > News > Some properties of gallium nitride films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy
Some properties of gallium nitride films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy
The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E2(high) mode in the Raman spectra after annealing.
 
Source: Journal of Crystal Growth
 
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