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Home > News > Synthesis of gallium nitride films by a novel electrodeposition route
Synthesis of gallium nitride films by a novel electrodeposition route
Gallium nitride films were deposited onto SnO2-coated glass substrates by an electrodeposition technique. A mixture of gallium nitrate, ammonium nitrate and water was utilized as electrolyte for the above. The applied voltage between the electrodes was 7 V for the deposition of gallium nitride films. The films were well crystallized with an average grain size of 0.2–0.4 μm. XRD studies indicated the presence of both c-GaN and h-GaN phases in the film. FTIR spectra showed the characteristic peak for gallium nitride at 541 cm−1 for all the samples.
 
Fig. 1. Schematic diagram of the electrolytic bath.
 
Source: Materials Letters
 
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