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Home > News > The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer
The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

 

Highlights

 

Concave nano-patterned sapphire substrates with SiO2 blocking layer.

The IQE is almost two times larger than that of conventional one.

The EQE was extremely enhanced more than 100%.

 



In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

Keywords

  • GaN
  • LED
  • Sidewall blocking layer
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