Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1−xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the AlxGa1−xN barrier of 27.7±0.1%, AlxGa1−xN barrier thickness of 25 nm±4%, sheet carrier density of 1.05×1013 cm−2±4%, pinch-off voltage of −5.3 V±3%, and sheet resistance of 449 Ω±1%.

PACS

  • 81.05.Ea
  • 81.15.Gh
  • 85.30.−z

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B3. High electron mobility transistors

SOURECE:SCIENCEDIRECT

 

If you need more information about GaN HEMT epitaxial wafer, please visit :http://www.galliumnitrides.com or send us email at gan@powerwaywafer.com.