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Home > News > Rietveld-refinement study of aluminium and gallium nitrides
Rietveld-refinement study of aluminium and gallium nitrides

Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P63mc) materials. The following crystallographic data were obtained: a = 3.11197(2) Å, c = 4.98089(4) Å, c/a=1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(1) Å, c = 5.18614(2) Å, c/a = 1.62606(1), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results.


  • aluminium and gallium nitrides;Semiconductors
  • Crystal structure and symmetry
  • X-ray diffraction
  • Aluminium nitride
  • Gallium nitride;
  • Powder diffraction
  • Lattice parameter
  • Structure refinement
  • Rietveld method


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