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Home > News > Sputter deposition of gallium nitride films using a GaAs target
Sputter deposition of gallium nitride films using a GaAs target
GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0–100% nitrogen in argon) at substrate temperatures of 450 and 550°C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550°C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic.
 
Fig. 1. X-ray diffraction patterns of films deposited at 450°C using (a) 100% argon, (b) 10% nitrogen in argon and (c) 100% nitrogen.
 
Source:Thin Solid Films
 
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