Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate
Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate
We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This effect is characterized through the common prism-coupling technique with the application of a vertical direct-current electric field. Surface plasmon propagation was used to increase the sensitivity of the electro-optic measurements. We have obtained a large refractive index variation for GaN epilayer, around 1.4×10-2 at 1.55μm wavelength. In order to understand the origin of the index modulation, we have conducted a scanning transmission electron microscopy analysis and discussed the influence of threading dislocations density acting as traps and thermo-optic effect. According to recent works, we observed experimentally the optical response of a non-linear electro-optic effect on GaN on Si(111) substrate and estimated a Kerr coefficient of about 2.14×10-16m2V-2.
 
Source: IEEE
 
If you need more information about Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate, please visit:http://www.galliumnitrides.com or send us email at gan@powerwaywafer.com.