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Home > News > Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

October 31, 2017


Highlights

•Non-polar and semi-polar growth appears on the edges of HVPE grown in c-direction.


•The edges generate significant stress leading to structural deterioration of HVPE-GaN.


•Crystallization on the edges of the HVPE-GaN/Am-GaN couple should be prevented.


•Appropriate treatment of the edges or changing the shape of the seed is a solution.


Abstract

Study on the sources of stress in HVPE-GaN layer crystallized on 1-in. ammonothermally grown GaN seed is presented in this paper. Characterization by means of X-ray diffraction and transmission electron microscopy is performed. HVPE-GaN samples of high quality and those with visible quality deterioration are investigated on c-plane and m-plane cross-sections. Special attention is paid to HVPE material growing in semi-polar and non-polar directions on the edges of the seed and the growing layer. It is shown that this material generates significant stress leading to a structural deterioration of HVPE-GaN growing in the c-direction.


Keywords

A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III–V materials 


Source:ScienceDirect


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