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Home > News > Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
In this paper we demonstrate work on developing the kinetic Wulff plots and quasi-equilibrium crystal shapes of GaN by hydride vapor phase epitaxy to understand the stable polar, semipolar, and nonpolar planes that emerge naturally from the GaN crystal. High quality bulk m-plane GaN substrates were masked with circular openings to perform selective area growth studies. Growths were performed by hydride vapor phase epitaxy over a range of temperatures, pressures and carrier gases. The quasi-equilibrium crystal shapes were shown to have clear m-plane {11(-)00} facets and a sharp and flat (0001(-)) N-face or c− face. The (0001) Ga-face or c+ face became faceted with {101(-)1} planes emerging with reduced pressures and temperatures. Based on the stable facets, kinetic Wulff plots were constructed.
Highlights
► Demonstrated SAG of GaN on high quality bulk GaN substrates by HVPE.
► Islands from these growths reveal the QECS of GaN under varying growth ranges.
► QECS of GaN is shown to have clearm-plane facets and flat N-face.
► Ga-face became faceted with {101(-)1} planes with reduced pressures and temperatures.
► From this information the kinetic Wulff plots of GaN were constructed.
 
Fig. 1. An overview of the mask used. The circular openings are 5 μm in diameter and arranged in a hexagonal pattern in grids of fill factors from 0.1 to 0.4. These grids are then laid out in a 4×4 mm pattern.
Source: University of California

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