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Home > News > Contacts of titanium nitride to n- and p-type gallium nitride films
Contacts of titanium nitride to n- and p-type gallium nitride films
The electrical characteristics of titanium nitride (TiNx) contacts to n- and p-type GaN films, deposited by reactive magnetron sputtering at room temperature, are investigated. The contacts of TiNx to n-type GaN are ohmic and to p-type GaN are rectifying, while their properties are strongly dependent on the stoichiometry of the deposited titanium nitride layer. It is shown that the ohmic behavior of the contacts is associated with the presence of a high density of interface states and not to the low Schottky barrier.
 
Fig. 1. Current–voltage characteristics of titanium nitride contacts on Si-doped GaN films measured at room temperature. The titanium nitride film was deposited by reactive magnetron sputtering under N2 flow rate of about 2 sccm and substrate bias voltage: (a) Vb=−40 V for the GaN film on LT GaN buffer layer and (b) Vb=−120 V for the GaN film on LT AlGaN buffer layer.
 
Source: Solid-State Electronics
 
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