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Home > News > Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

 This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires1 that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042 ± 0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0 ± 1.7 GPa to 7.5 ± 3.4 GPa. Failure modes included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS test actuator.

Source: Sensors and Actuators A: Physical

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